Samsung Electronics has announced the start of mass production of the industry's first 512GB eUFS 3.0 flash memory. It is designed for a new generation of mobile devices. Compared to the eUFS 2.1 memory, the transfer rate has more than doubled. In addition, Samsung has revealed plans to produce similar chips of even greater capacity.
"The start of mass production of our eUFS 3.0 line gives us a huge advantage in the next generation mobile market, which we provide read speed, which was previously only available on ultra-thin laptops. As we are expanding our offers eUFS 3.0, including the version of 1 terabyte (TB), at the end of this year, we expect that we will play an important role in accelerating the pace of development in the market of mobile phones of the premium class," said Chol Choi, Executive Vice President of sales and marketing memory in Samsung Electronics.
Samsung eUFS 3.0 512 GB memory chips consist of eight 512-Gigabit (Gbit) V-NAND crystals of the fifth generation with an integrated high-performance controller. The maximum data transfer rate has increased to 2100 MB/s.for comparison, the Samsung eUFS 2.1 chip on 1 TB supports data transfer at speeds up to 1000 MB/s this read speed is four times higher than that of a SATA solid state drive (SSD) and 20 times higher than that of a conventional microSD card. The serial write speed is now 410 MB / s, which is equivalent to a SATA SSD. The speed of random reading and writing increased by 36%.
One of the first devices with a new memory chip should be a foldable Galaxy Fold smartphone. In addition, in the second half of the year, the company plans to start production of One of the first devices with a new memory chip should be a foldable Galaxy Fold smartphone. In addition, in the second half of the year, the company plans to start production of eUFS 3.0 modules for 128 GB and 1 TB. modules for 128 GB and 1 TB.